Optical properties of porous silicon surface

A bstract The optical characieristics (irünsniission and rellection. absorpiion and scatiering coeilicienis) of the Si iianowires ohtaiiied by electrocheiiiical rrratnieiii of Si wakrs were studied experimenrally in spectral range 350 750 nrn. usiiig the differeni arigles ol'incidencr aiid iiiasuring h e aiiyiilar diwihution of the rellected (scattered) lighi. Theoreiical treatineni niade on the hasis of the Mie iheory and soriie original rnodelling explains the characieristics determined and gives a simple rnethd of estimation of refractive index ol' poroiis seiiiicondiictor layer creaied above ihe bulk specimen. The riiain conclusion is that the iniegraied l i ~ h t relleciion froin the P-Si siitiace is esseiitially smaller [han h e reflrcrion from h e hulk crystalline Si. Both theory and experiinent show ihai the poroiis sutiace layer. although non-homogeneoiis and tliiis possessing h e light scattering, acis as aniireflection coatiiig Tor Si. and coiild be used. in particular. in solar cells made from Si as well a 5 from the other semiconducting marerials